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60 积分 2023-03-02 加入
Channel and contact length scaling of two-dimensional transistors using composite metal electrodes
22小时前
待确认
Self-Doped p-n Junction with High Carrier Concentration in 2D GaN/MoSSe Heterostructures: A First-Principles Study
1年前
已完结
Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures
1年前
已完结
Self-Doped p-n Junction with High Carrier Concentration in 2D GaN/MoSSe Heterostructures: A First-Principles Study
1年前
已完结
Atomic and electronic structures of interfaces between amorphous (Al2O3)1−x(SiO2)x and GaN polar surfaces revealed by first-principles simulated annealing technique
1年前
已完结
Electronic and optical properties of GaN/MoSe2 and its vacancy heterojunctions studied by first-principles
1年前
已完结
Reversible doping polarity and ultrahigh carrier density in two-dimensional van der Waals ferroelectric heterostructures
2年前
已完结
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