Lv5
850 积分 2025-02-26 加入
Effects of crucible etching and polycrystal deposition in the top-seeded solution growth of SiC single crystal
22天前
已完结
Thermal Analysis of the Double‐Crucible Method in Continuous Silicon Czochralski Processing: I . Experimental Analysis
27天前
已完结
Numerical study on the effects of inner crucible window heights on the growth of silicon in a continuous Czochralski process
27天前
已完结
Optimization of crucible and heating model for large-sized silicon carbide ingot growth in top-seeded solution growth
29天前
已完结
Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE
1个月前
已完结
Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE
1个月前
已完结
Influence of particle parameters on the melting/migration of silicon particles and turbulent heat transfer during CCZ monocrystalline silicon growth
1个月前
已完结
Diameter control of continuous Czochralski silicon based on machine learning
1个月前
已完结
Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon
1个月前
已完结
Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method
1个月前
已完结
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