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76 积分 2024-03-04 加入
Atomic layer deposition of HZO ferroelectric films beyond the upper thickness limit via tetragonal-phase nucleation engineering
1个月前
已关闭
Robust Ga2O3 Memristor with Sharp Stable Negative Differential Resistance for EnergyEfficient Reliable Analog Resistive Switching and Artificial Synapse Applications
2个月前
已完结
A gate programmable van der Waals metal-ferroelectric-semiconductor vertical heterojunction memory
2个月前
已完结
2D transition metal dichalcogenides
4个月前
已完结
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
4个月前
已完结
Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions
5个月前
已完结
PhotoinducedNonvolatileResistiveSwitchingBehavior inOxygen DopedMoS2 foraNeuromorphicVisionSystem
5个月前
已完结
High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm
6个月前
已完结
Lateral homojunctions of WSe 2 through contact surface engineering with SF 6 plasma etching
6个月前
已关闭
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