Lv11
74 积分 2026-07-20 加入
Robust Vth stability in normally off GaN HEMTs with a stacked p + /p − -NiO gate: Suppression of interface trapping and electric-field crowding
4小时前
已完结
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
18天前
已完结
Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density
1个月前
已完结
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