Lv1
4 积分 2026-09-19 加入
Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping
7小时前
已完结
An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
7小时前
已完结
High-current, high-voltage AlN p–n junction diodes enabled by compositional grading
1个月前
已完结
Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures
1个月前
已完结
Doping-Free Carbon-Nanotube Transistors as Wide-Temperature-Range Devices
1个月前
已完结
High rectification ratio metal-insulator-semiconductor tunnel diode based on single-layer MoS2
1个月前
已关闭
Temperature-dependent current-voltage characteristics of β-Ga2O3 trench Schottky barrier diodes
1个月前
已关闭
High current ultrawide bandgap AlGaN pin diodes with low on-resistance and UVC emission
1个月前
已关闭
Electrical contacts to two-dimensional semiconductors
1个月前
已完结
Correlation between optical and electrical properties of Mg-doped AlN epilayers
1个月前
已完结
皖公网安备34019202002308
