Lv2
102 积分 2023-08-15 加入
TEOS-based PECVD of silicon dioxide for VLSI applications
1个月前
已完结
Properties and electric characterizations of tetraethyl orthosilicate-based plasma enhanced chemical vapor deposition oxide film deposited at 400°C for through silicon via application
1个月前
已完结
Growth of SiO2 films by TEOS-PECVD system for microelectronics applications
1个月前
已完结
Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits
1个月前
已完结
Study of Wafer Arcing Defects on PECVD Low Deposition Rate TEOS Oxide Thin Film
1个月前
已完结
Effective control of TEOS–PECVD thin film depositions
1个月前
已完结
皖公网安备34019202002308
