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70 积分 2025-12-04 加入
Vertically Stacked Dram Technology for Scaling Evolution
3小时前
求助中
Electrical Characteristics of the 4F 2 Vertical Gate (VG) DRAM integrated with Bit Line Shielding (BLS) and Back Gate (BG) Transistor
3小时前
求助中
Benchmarking Monolithic 1T1C 3D DRAM Cell Architectures
3小时前
求助中
Row Hammer Effect and Floating Body Effect of Monolithic 3D Stackable 1T1C DRAM
3小时前
已完结
Innovative DRAM Cell Featuring a Vertical Junctionless Pillar Access Transistor With a High Work-Function Molybdenum Nitride Metal Gate for Enhanced Performance and Efficiency
5个月前
已完结
Innovative DRAM Cell Featuring a Vertical Junctionless Pillar Access Transistor With a High Work-Function Molybdenum Nitride Metal Gate for Enhanced Performance and Efficiency
5个月前
已完结
A 3D Stackable 1T1C DRAM: Architecture, Process Integration and Circuit Simulation
5个月前
已完结
Vertical Channel Transistor (VCT) as Access Transistor for Future 4F2 DRAM Architecture
5个月前
已完结
Highly tunable Förster resonance energy transfer across atomically thin organic–inorganic interfaces
6个月前
已完结
Double‐Sided Epitaxial Structure with Quantum Dots‐Embedded Porous GaN for Enhanced Color Conversion
6个月前
已完结
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