Lv1
58 积分 2024-09-09 加入
薄膜晶体管液晶显示器的发展分析
15天前
已完结
Impact of Strategic Approaches for Improving the Device Performance of Mesa-shaped Nanoscale Vertical-Channel Thin-Film Transistors Using Atomic-Layer Deposited In–Ga–Zn–O Channel Layers
17天前
已完结
基于IGZO的薄膜晶体管结构设计和性能研究
25天前
已完结
金属氧化物薄膜晶体管紧凑模型及参数提取的研究
25天前
已完结
面向新型存储器的半导体器件紧凑模型及可靠性研究
25天前
已完结
源栅薄膜晶体管的理论模型及应用研究
1个月前
已完结
P‐15.15: Improvement of a‐IGZO TFTs Electrical Characteristics for Short Channel TFTs
1个月前
已完结
Self-Aligned Double Injection-Function TFT for Deep Sub-Micrometer Channels’ Length—Application to Solution-Processed Indium Gallium Zinc Oxide
1个月前
已完结
Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions
1个月前
已完结
(Invited) Device Scalability of InGaZnO TFTs for Next-Generation Displays
1个月前
已关闭
Discharge reaction mechanism of room-temperature sodium–sulfur battery with tetra ethylene glycol dimethyl ether liquid electrolyte
皖公网安备34019202002308
