Lv12
60 积分 2026-06-26 加入
Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs
1天前
已完结
Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
2天前
已完结
Benefit of H2 surface pretreatment for 4H-SiC oxynitridation using N2O and rapid thermal processing steps
4天前
已完结
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