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80 积分 2026-06-26 加入
650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications
2个月前
已完结
Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories
2个月前
已完结
1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications
2个月前
已完结
Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations
2个月前
已完结
4H-SiC normally-off vertical junction field-effect transistor with high current density
2个月前
已完结
Current Status and Future Prospects of SiC Power JFETs and ICs
2个月前
已关闭
Normally-off trench JFET technology in 4H silicon carbide
2个月前
已完结
Design of a novel planar normally-off power VJFET in 4H-SiC
2个月前
已完结
Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs
3个月前
已完结
Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing
3个月前
已完结
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