Lv3
270 积分 2025-03-12 加入
Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer
3个月前
已完结
First-Principles Study of Oxygen Vacancy Defects in Amorphous HfO2/Si Interfaces
4个月前
已完结
Origin of HfO2/GaAs interface states and interface passivation: A first principles study
4个月前
已完结
Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunction by irradiation-induced oxygen defect from first-principles
4个月前
已完结
Interfacial bonding and electronic characteristics of CrN/3C-SiC heterostructures: A combined experimental and first-principles calculations study
4个月前
已完结
Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals
4个月前
已完结
Calculated natural band offsets of all II–VI and III–V semiconductors: Chemical trends and the role of cation d orbitals
4个月前
已完结
Band alignments at interface of Cu2ZnSnS4/ZnO heterojunction: An X-ray photoelectron spectroscopy and first-principles study
4个月前
已完结
Passivation for Cu 2 ZnSnS 4 /WZ-ZnO interface states: From the first principles calculations
4个月前
已完结
Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study
8个月前
已完结
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