Lv11
45 积分 2021-01-04 加入
量子阱生长气压对InGaN/GaN黄光LED光电性能的影响
3天前
已完结
Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
1个月前
已完结
Theoretical study of polarization-doped GaN-based light-emitting diodes
1个月前
已完结
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure
1个月前
已完结
Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer
1个月前
已完结
Nonradiative recombination dynamics in InGaN/GaN LED defect system
2个月前
已完结
Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED
3个月前
已完结
Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition
3个月前
已完结
Comparison between the Photoluminescence Mappings Under Selective and Non-selective Excitation and the Electroluminescence Mappings of the Epitaxial Wafers with InGaN-LED Structure
4个月前
已完结
Comparison between the Photoluminescence Mappings Under Selective and Non-selective Excitation and the Electroluminescence Mappings of the Epitaxial Wafers with InGaN-LED Structure
4个月前
已关闭
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