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1040 积分 2023-06-19 加入
Identifying Ferroelectric Switching Pathways in HfO2: First Principles Calculations under Electric Fields
1天前
待确认
Three types of resistive switching in ferroelectric Hf 0.5 Zr 0.5 O 2 films mediated by polarization reversal and oxygen vacancy migration
3天前
已完结
Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers
3天前
已完结
Polarization-controlled memristive synapse characteristics of HfZrO2-based ferroelectric switchable diode
3天前
已完结
Resistance Switching and Carrier Transport Mechanisms of HfO2-Based Ferroelectric Diode
3天前
已完结
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
3天前
已完结
First-Principles Modeling and Calculations of HfO2/Si Interface in Nano Devices
4天前
已完结
High-temperature memristors enabled by interfacial engineering
17天前
已完结
High-temperature memristors enabled by interfacial engineering
17天前
已完结
Identify the switching of V O3 and V O4 and its effect on ferroelectric hafnia
1个月前
已完结
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