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5 积分 2021-10-04 加入
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning
3个月前
已完结
Complementary Field-Effect Transistor (CFET) Demonstration at 48nm Gate Pitch for Future Logic Technology Scaling
3个月前
已完结
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
3个月前
已完结
Modifying buried heterogeneous contacts to promote efficient carrier extraction for efficient perovskite solar cells
4个月前
已完结
Stabilizing 2D perovskite passivation layer with mixed spacer cations for efficient and stable perovskite solar cells
7个月前
已完结
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