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100 积分 2024-07-18 加入
High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3 -plasma surface pretreatment
1个月前
已完结
Influence of NH3 plasma pretreatment on the properties of plasma-enhanced chemical-vapor-deposited SiON on GaAs interface
1个月前
已关闭
Influence of substrate pre-treatments on the growth of SixNyHz thin films by plasma enhanced chemical vapor deposition
2个月前
已完结
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