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40 积分 2026-04-22 加入
Lattice defects distribution of H+ implanted 4H-SiC investigated by deep-ultraviolet Raman spectroscopy
5个月前
已完结
XPS characterization of nitrogen implanted silicon carbide
5个月前
已完结
Formation and bonding structure of silicon nitride by 20-keV N+ ion implantation
5个月前
已完结
Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with different abrasives
6个月前
已完结
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