Lv51
850 积分 2024-11-15 加入
Excellent electroluminescence and electrical characteristics from p-CuO/i-Ga2O3/n-GaN light-emitting diode prepared by magnetron sputtering
1个月前
已完结
Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices
1个月前
已完结
Ultrahigh Bipolar Photoresponse in a Self-Powered Ultraviolet Photodetector Based on GaN and In/Sn-Doped Ga2O3 Nanowires pn junction
1个月前
已完结
High Gain, Low Voltage Solar‐Blind Deep UV Photodetector Based on Ga 2 O 3 /(Al x Ga 1‐x ) 2 O 3 /GaN nBp Heterojunction
1个月前
已完结
O2-to-Ar Ratio-Controlled Growth of Ga2O3 Thin Films by Plasma-Enhanced Thermal Oxidation for Solar-Blind Photodetectors
1个月前
已完结
Self-Powered Wavelength-Selective Ultraviolet Bipolar Photodetector Based on Al/p-GaN/In:Ga 2 O 3 /SnO 2 Structure for Secure Optical Communication
1个月前
已完结
Progresses and Frontiers in Ultrawide Bandgap Semiconductors
1个月前
已完结
Enhanced ultraviolet electroluminescence performance from p-NiO/n-GaN heterojunctions by using i-Ga2O3 as electron blocking layer
1个月前
已完结
RF magnetron sputtering of G a 2 O 3 thin films: Analysis of thermal annealing induced tuning of structural, optical characteristics, and energy band alignments
1个月前
已完结
High-Performance Ultraviolet Photodetectors Based on Nanoporous GaN with a Ga2O3 Single-Crystal Layer
1个月前
已完结
皖公网安备34019202002308
