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2024-11-27 加入
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Degradation mechanism differences between TiN- and TaN-electrode HZO-based FeRAMs analyzed by current mechanism fitting
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Ferroelectric tunnel junctions with 5 nm-thick HZO for tunable synaptic plasticity and neuromorphic computing
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Microscopic Mechanisms, Morphology, and Defect Formation in the Thermally Activated Crystallization of Methylammonium Lead Iodide
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Nanoscale Strain and Octahedral Tilting Removes Structural and Nonradiative Defects in 2D-Templated FAPbI3
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Exploration of structural influences on ferroelectric switching characteristics in ferroelectric thin-film transistors
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Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
10个月前
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