Lv0
0 积分 2023-12-04 加入
Analytical Study of Performance Parameters of InGaN/GaN Multiple Quantum Well Solar Cell
15小时前
已完结
Statistical Analysis of the Photoelectric Characteristics for InGaN/GaN MQWs Solar Cells Following Proton Irradiation
15小时前
已完结
Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p–i–n Homojunction Solar Cells
16小时前
已完结
Bottom‐Up Formation of III‐Nitride Nanowires: Past, Present, and Future for Photonic Devices
2个月前
已完结
Recent Advances in the Preparation of Gallium‐based 2D Materials and Devices Based on Gallium Liquid Metal
2个月前
已完结
1.6‐Inch Transparent Micro‐Display with Pixel Circuit Integrated microLED Chip Array by Misalignment‐Free Transfer
2个月前
已完结
MoS2/GaN Junction Field‐Effect Transistors with Ultralow Subthreshold Swing and High On/Off Ratio via Thickness Engineering for Logic Inverters
2个月前
已完结
Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy
6个月前
已完结
Atomistic analysis of Auger recombination inc-plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination
6个月前
已完结
P-type ionization level lowering in ultrawide bandgapAl1−xGaxN[112¯0] digital alloys
6个月前
已关闭
皖公网安备34019202002308
