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86 积分 2024-12-19 加入
Properties of hexagonal ScN versus wurtzite GaN and InN
5个月前
已完结
Aluminum scandium nitride-based metal–ferroelectric–metal diode memory devices with high on/off ratios
6个月前
已完结
Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN
6个月前
已完结
In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD
7个月前
已完结
Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD
7个月前
已完结
Understanding memory window of ferroelectric field-effect transistor under coexistence of charge trapping and ferroelectric polarization: violation of linear superposition
7个月前
已完结
Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
7个月前
已完结
UWBG ferroelectric ScAlN/AlGaN high-electron mobility transistor
7个月前
已完结
Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier
9个月前
已完结
High Mobility Multiple-Channel AlScN/GaN Heterostructures
9个月前
已关闭
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