Lv21
110 积分 2021-09-12 加入
A 3.0 Gb/s/pin 4t generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package
3个月前
已完结
The Influence of NAND Flash Self-Recovery Effect on Retention Error
10个月前
已关闭
Data retention in MLC NAND flash memory: Characterization, optimization, and recovery
1年前
已完结
Threshold-Voltage Instability Due to Damage Recovery in Nanoscale NAND Flash Memories
1年前
已完结
Realizing Unequal Error Correction for <sc>nand</sc> Flash Memory at Minimal Read Latency Overhead
1年前
已完结
A sensitive immunosensing platform based on the high cathodic photoelectrochemical activity of Zr-MOF and dual-signal amplification of peroxidase-mimetic Fe-MOF
1年前
已完结
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
1年前
已完结
Critical thickness for ferroelectricity in perovskite ultrathin films
1年前
已完结
Electronic and structural properties of MgS and MgSe
1年前
已完结
皖公网安备34019202002308
