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4798 积分 2022-09-10 加入
Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs
1个月前
已完结
Effects of High‐Pressure H2 and D2 Post‐Metallization Annealing on the Electrical Properties of HfO2/Si0.7Ge0.3
1个月前
已完结
Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates
1个月前
已完结
Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition
3个月前
已完结
Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation
3个月前
已完结
Investigation on the dominant key to achieve superior Ge surface passivation by GeO based on the ozone oxidation
3个月前
已完结
Experimental study of the ultrathin oxides on SiGe alloy formed by low-temperature ozone oxidation
3个月前
已完结
Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation
3个月前
已完结
Flattening of micro-structured Si surfaces by hydrogen annealing
3个月前
已完结
Behavior of trench surface by H2 annealing for reliable trench gate oxide
3个月前
已完结
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