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30 积分 2026-08-11 加入
Radiation-Hardened p-GaN HEMT Design Featuring Polarisation Superjunction Modulation
1天前
已完结
Single-event burnout hardening in p-GaN HEMTs through comb-patterned N-AlGaN channel engineering
1天前
已完结
450 V/18 mΩ Radiation Hardened P-GaN Gate HEMT With Single-Event Hardness at 82 MeV•cm2/mg
1天前
已完结
Achieving Robust Single-Event Irradiation Tolerance in 6-inch E-mode GaN-on-Sapphire HEMTs With a Thin AlN Buffer
1天前
已完结
Single-Event Hardened P-GaN Gate HEMT With Schottky Source Structure
2天前
已完结
Investigation on the Single-Event Burnout Mechanism and Hardening Design in p-GaN Gate AlGaN/GaN HEMTs
2天前
已完结
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