Lv11
30 积分 2026-08-11 加入
Over 1200 V Normally-OFF p-NiO Gated AlGaN/GaN HEMTs on Si With a Small Threshold Voltage Shift
10分钟前
待确认
Research on High Threshold Voltage, High Output Current and Low Gate Leakage Current p-GaN and Grooved Gate Composite Gate HEMT with N-Well and AlGaN–GaN–AlGaN Double Barrier Cap Layer
4天前
已完结
Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps
4天前
已完结
Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers
4天前
已完结
GaN-Based High Electron Mobility Transistor with Trench-Composite Gate and Asymmetric InAlN/AlGaN Barriers
4天前
已完结
Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer
4天前
已完结
Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer
4天前
已完结
Irradiation Hardened p -GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV⋅cm 2 /mg and 95% Conversion Efficiency at 300 W/500 kHz
17天前
已完结
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer
18天前
已完结
Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition
18天前
已完结
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