Lv11
22 积分 2026-03-03 加入
2 kV β -Ga2O3 Schottky diode with HfO2/SiO2 dual-layer field plate and mesa termination
10小时前
已完结
A β-Ga2O3 DUV/X-Ray Detector with High Sensitivity and Rapid Response Fabricated by Mist-CVD
2天前
已完结
Heavy-ion-induced degradation mechanisms and supercritical fluid recovery dynamics in Al2O3/β-Ga2O3 metal-oxide-semiconductor capacitors
9天前
已完结
Impact of Deep-Level Traps on Carrier Mobility in β-Ga2O3 MOSFETs
9天前
已完结
The influence of new collaborators on the innovation performance of focal inventors: the moderating role of network embeddedness
10天前
已完结
A 4H-SiC trench MOSFET with thick bottom oxide for improving characteristics
13天前
已完结
4.1/3.5 kV breakdown voltage in depletion/enhancement-mode MOCVD-grown Ga2O3 MOSFETs on sapphire substrates
16天前
已完结
On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors
29天前
已完结
GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
1个月前
已完结
Ion implantation technology in SiC for power device applications
1个月前
已完结
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