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42 积分 2024-03-03 加入
Reverse current suppression of p-GaN diode using SiOx interlayer
54分钟前
求助中
7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management
56分钟前
已完结
Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench
59分钟前
已完结
Vertical GaN trench MOSFETs with step-graded channel doping
59分钟前
已完结
Modulation Bandwidth Analysis of GaN-based Micro-LED Deduced by an Equivalent Circuit Model
19天前
已完结
Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis
23天前
已完结
Characteristics of transport properties in ultra-wide bandgap Al0.65Ga0.35N channel HEMTs with low contact resistance and high breakdown voltage (>2.5 kV)
23天前
已完结
Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability
1个月前
已完结
Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission
1个月前
已完结
2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure
1个月前
已完结
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