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190 积分 2024-03-03 加入
GaN cap impacts on gate leakage mechanisms in AlGaN/GaN high-electron mobility transistors
1个月前
已完结
Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination
1个月前
已完结
Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer
2个月前
已关闭
InGaN/GaN light-emitting diode with a polarization tunnel junction
3个月前
已完结
Gallium nitride-based complementary logic integrated circuits
3个月前
已完结
Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD
3个月前
已完结
Injection-Limited and Space-Charge-Limited Conduction in Wide Bandgap Semiconductors with Velocity Saturation Effect
3个月前
已完结
Ab initio calculation of carrier mobility in semiconductors including ionized-impurity scattering
3个月前
已完结
Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV
3个月前
已完结
The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices
3个月前
已完结
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