Lv3
244 积分 2024-03-03 加入
The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices
5天前
已完结
Electric field-modulated AlGaN/GaN Schottky barrier diode with high breakdown voltage via polarized charge around thin GaN channel
5天前
已完结
Theoretical investigations on the confinement properties of InAlN/GaN/AlGaN heterostructures employing AlxGa1-xN as back-barrier
25天前
已完结
Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3
2个月前
已完结
Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution
2个月前
已完结
Local dielectric tunnel junction to manage the current distribution for AlGaN-based deep-ultraviolet light-emitting diodes with a thin p-GaN layer
2个月前
已完结
Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment
2个月前
已完结
Effect of dual-channel structures on DC characteristics of vertical trench GaN-based MOSFETs
2个月前
已完结
Role of strain and composition on the piezoelectric and dielectric response of AlxGa1−xN: Implications for power electronics device reliability
2个月前
已完结
Dependence of the refractive index of AlxGa1−xN on temperature and composition at elevated temperatures
2个月前
已完结
皖公网安备34019202002308
