Lv3
230 积分 2024-02-26 加入
The physics of GaN-based light-emitting diodes
22天前
已完结
AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si
28天前
已完结
nvestigation of Luminescence Spectra for InGaN/GaN Rectangular, Trapezoidal, and Triangular MQW Light-Emitting Diodes
1个月前
已关闭
Influence of well position on the electroluminescence characteristics of InGaN/GaN single quantum well red light-emitting diodes
1个月前
已完结
Band parameters for III–V compound semiconductors and their alloys
1个月前
已完结
InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes
1个月前
已完结
High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells
1个月前
已关闭
AlN/GaN/InGaN interface engineering for high-efficiency InGaN-based red quantum wells grown on Si
1个月前
已完结
Investigation on compositional pulling effect of InGaN red multiple quantum wells and its remedy
1个月前
已完结
Carrier Dynamics and Structural Analyses of Orange/Red In-Rich InGaN Double-Quantum Wells LED Hybridized by Blue InGaN Single-Quantum Well
1个月前
已完结
皖公网安备34019202002308
