Lv2
118 积分 2022-12-24 加入
Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates
9个月前
已完结
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
9个月前
已完结
High Si and Ge n-type doping of GaN doping - Limits and impact on stress
9个月前
已完结
Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn
10个月前
已关闭
Germanium - the superior dopant in n-type GaN
11个月前
已完结
10 kV E-mode GaN HEMT: Physics for breakdown voltage upscaling
11个月前
已完结
Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates
11个月前
已完结
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