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50 积分 2020-07-16 加入
High-pressure CVD Growth of InN and Indium-rich Group III-nitride Compound Semiconductors for Novel Mid- and Far-infrared Detectors and Emitters
3天前
求助中
Alleviation of parasitic reactions for III-nitride epitaxy in MOCVD with a spatial separated source delivery method by controlling the main reaction type
4天前
已完结
Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation
4天前
已完结
Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes
5天前
已完结
Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots
8天前
已完结
Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs
8天前
已完结
Electronic Properties of Hexagonal V-Shaped Gallium Nitride Pits
8天前
已完结
H2 based etching of GaN for re-grown gallium-free InAlN barriers giving very low 2DEG sheet resistance of 185 Ω/sq
1个月前
已完结
Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes
1个月前
已完结
Understanding and controlling Ga contamination in InAlN barrier layers
1个月前
已完结
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