Lv11
28 积分 2026-06-18 加入
A novel structure of less switching loss IGBT with super junction
2小时前
已完结
SiC trench IGBT with n-barrier layer to enhance conductivity modulation
2小时前
待确认
4H-SiC semi-superjunction IGBT with split-gate and back-side trench heterojunction for low loss and low EMI noise
2小时前
已完结
Novel 4H-SiC IGBT design for improved turn-on performance and dV/dt controllability based on space charge modulation
2小时前
求助中
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