Lv1
80 积分 2024-06-29 加入
Challenges and Solutions of Replacement Metal Gate Patterning to Enable Gate-all-Around Device Scaling
7个月前
已完结
Anomalous Reconfigurable‐Transport in MoS 2 Transistors by Electrically‐Switchable van der Waals Interfacial Dipole
7个月前
已完结
A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er2O3 Insulator Through Thermal Evaporation
8个月前
已完结
Multilayer MoS2 Back‐Gate Transistors with ZrO2 Dielectric Layer Optimization for Low‐Power Electronics
8个月前
已完结
Atomic mechanism of electric dipole formed at high-K: SiO2 interface
8个月前
已完结
Origin of electric dipoles formed at high-k/SiO2 interface
8个月前
已完结
High-Speed Electro-Optic Modulator Based on Chemical-Vapor-Deposited Graphene with van der Waals Hybrid Dielectric
9个月前
已完结
Conformal bilayer h -AlN epitaxy on WS2 by ALD with ultralow leakage current
9个月前
已完结
Efficient electrical properties modulation of wafer-scale top gated MoS2 transistors via non-destructive annealing
9个月前
已完结
Organic thin-film tunnel transistors
11个月前
已完结
皖公网安备34019202002308
