Lv21
108 积分 2024-07-06 加入
Ultra-Wide Bandgap β -Ga 2 O 3 Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management
1小时前
待确认
Atomic Layer Deposition
23天前
已完结
Atomic Layer Deposition of Gallium Oxide using Gallium Triazenide and Water
23天前
已完结
Turing-patterned Ta2S3 enables sub-2 nm diffusion barrier for advanced Cu interconnects
23天前
已完结
Enhanced performance of solar-blind UV photodetectors based on β-Ga2O3/SiO2/Si nBn heterojunction with varied thicknesses of SiO2 blocking layer
2个月前
已完结
Electrical Transport at n-Ga2O3/n-SiC Hetero-Interface Constructed by Hydrophilic and Surface Activated Bonding
2个月前
已完结
Achieving programmable bipolar photocurrents via p – n junction design for PEPS-based optoelectronic applications
4个月前
已完结
Dual-Precursor Atomization for (In x Ga 1-x ) 2 O 3 Films in UV Photodetectors
6个月前
已完结
Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement
6个月前
已完结
Postannealed (GaIn)2O3 Films Deposited by Sputtering for Ultraviolet Photodetection
6个月前
已完结
皖公网安备34019202002308
