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10 积分 2024-01-02 加入
Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor
1小时前
已完结
Characteristics of 𝑛+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor
1小时前
求助中
The Structure of Silica Glass by X-Ray Diffraction Studies
1个月前
已关闭
Excitation by and Surface Refection of Fast Hydrogen Atoms in Low-Pressure Hydrogen Discharges
7个月前
已关闭
Characterization of atomic-layer-deposited hafnium oxide/SiON stacked-gate dielectrics
8个月前
已完结
Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review
9个月前
已完结
Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor
9个月前
已完结
Amorphous oxide semiconductors: From fundamental properties to practical applications
9个月前
已完结
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
9个月前
已完结
Modification on phthalonitrile containing benzoxazine with cyaniding diamine-type benzoxazine: Curing reaction and properties of their glass fiber-reinforced composites
1年前
已完结
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