Lv11
80 积分 2024-10-23 加入
Quantum-Dot Infrared Photodetectors
5小时前
待确认
MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors
2个月前
已完结
Calculation of the carrier dynamics and impedance spectroscopy model in quantum well infrared photodetectors
3个月前
已完结
Time-resolved mid-infrared photoluminescence spectroscopy of an undoped InAs substrate
3个月前
已完结
Time-resolved mid-infrared photoluminescence from highly strained InAs/InGaAs quantum wells grown on InP substrates
3个月前
已完结
Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]
3个月前
已关闭
Editor’s note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]
4个月前
已完结
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
6个月前
已完结
Kinetics of accumulation of excess holes under photoexcitation and their relaxation in GaAs/AlGaAs shallow quantum wells
7个月前
已完结
Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells
8个月前
已完结
皖公网安备34019202002308
