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The effects of strain and electric field in MoSi2N4 and WSi2N4 bilayers
7小时前
求助中
Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices
11天前
已完结
High-conduction and ultra-steep switching in boron-phosphide cold-source field-effect transistors
2个月前
已完结
Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors
3个月前
已完结
Charged vacancy defects in monolayer phosphorene
3个月前
已完结
Efficient hybrid density functional calculations in solids: Assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional
3个月前
已完结
Finite-Size Supercell Correction for Charged Defects at Surfaces and Interfaces
3个月前
已完结
Vapour–liquid–solid–solid growth of two-dimensional non-layered β-Bi2O3 crystals with high hole mobility
4个月前
已完结
First-principles calculation of intrinsic point defects and doping performance of MoSi<sub>2</sub>N<sub>4</sub>
4个月前
已关闭
First-principles calculation of intrinsic point defects and doping performance of MoSi<sub>2</sub>N<sub>4</sub>
4个月前
已完结
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