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48 积分 2025-11-21 加入
Design of a P-type cold-source field-effect transistor with 2D MA 2 Z 4 : a study toward performance limits
2个月前
已完结
High-performance nanodevices based on WGe 2 N 4 monolayer
2个月前
已完结
The van der Waals MoSi2N4 materials family
2个月前
已完结
The effects of strain and electric field in MoSi2N4 and WSi2N4 bilayers
2个月前
已关闭
Monolayer WSi2N4: A promising channel material for sub-5-nm-gate homogeneous CMOS devices
3个月前
已完结
High-conduction and ultra-steep switching in boron-phosphide cold-source field-effect transistors
5个月前
已完结
Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors
6个月前
已完结
Charged vacancy defects in monolayer phosphorene
6个月前
已完结
Efficient hybrid density functional calculations in solids: Assessment of the Heyd–Scuseria–Ernzerhof screened Coulomb hybrid functional
6个月前
已完结
Finite-Size Supercell Correction for Charged Defects at Surfaces and Interfaces
6个月前
已完结
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