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Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors
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Imprint-Correlated Retention Loss in Hf₀.₅Zr₀.₅O₂ Ferroelectric Thin Film Through Wide-Temperature Characterizations
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Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors
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Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors
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Dynamic imprint recovery as an origin of the pulse width dependence of retention in Hf0.5Zr0.5O2-based capacitors
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Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
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