Lv11
26 积分 2026-02-04 加入
Study of GaN/AlGaN air structure gate HEMTs with high linearity for RF applications
1小时前
已完结
Theoretical and Analytical Investigation of Graded Barrier for Suppressing Trap-Induced Transient Lag in GaN HEMTs
2小时前
求助中
Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer
1个月前
已完结
Influence of polarization engineering in InxAlyGaN1−x−y back-barrier on AlGaN coupled channel MOS-HEMT with HfO2 gate dielectric for millimeter wave application
1个月前
已完结
Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire
3个月前
已完结
AlGaN/GaN HEMTs with an InGaN back‐barrier grown by ammonia‐assisted molecular beam epitaxy
4个月前
已完结
Effect of Dual Al2O3 MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT
4个月前
已完结
Performance Enhancement of AlGaN/GaN HEMT via Trap-State Improvement Using O2 Plasma Treatment
4个月前
已完结
Statistical analysis of vertically stacked nanosheet complementary FET based on polycrystalline silicon with multiple grain boundaries
4个月前
已完结
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