Lv4
600 积分 2023-03-20 加入
Temperature effects for GaN films grown on 4H-SiC substrate with 4° miscutting orientation by plasma-assisted molecular beam epitaxy
1个月前
已完结
In situ stress measurements during direct MOCVD growth of GaN on SiC
1个月前
已完结
Influence of 4H-SiC substrate miscut on the epitaxy and microstructure of AlGaN/GaN heterostructures
1个月前
已完结
Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition
1个月前
已完结
Fabrication and characterization of GaN HEMTs grown on SiC substrates with different orientations
1个月前
已完结
Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques
3个月前
已完结
KOH Wet Etching Mechanisms of III–N Nanopillars: Impact of Temperature and Concentration
3个月前
已完结
Mechanism of aluminum nitride etching with variation of potassium hydroxide molarity
3个月前
已完结
Correction to “KOH Wet Etching Mechanisms of III–N Nanopillars: Impact of Temperature and Concentration”
3个月前
已关闭
Metal–Organic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
4个月前
已完结
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