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550 积分 2023-03-20 加入
Enhancing Breakdown Performance of GaN HEMTs by Graded AlGaN Layer and C-doped Buffer
13天前
已关闭
The Influence of Fe Doping Tail in Unintentionally Doped GaN Layer on DC and RF Performance of AlGaN/GaN HEMTs
14天前
已完结
The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application
14天前
已完结
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
14天前
已完结
The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer
14天前
已完结
Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs
14天前
已完结
Enhancing Breakdown Performance of GaN HEMTs by Graded AlGaN Layer and C-doped Buffer
14天前
已关闭
Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs
14天前
已完结
Improved Breakdown Voltage and RF Power Characteristics of GaN HEMTs by Layered C/Fe-Doped GaN Buffer
14天前
已完结
Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)
19天前
已完结
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