| 标题 |
Enhancing Breakdown Performance of GaN HEMTs by Graded AlGaN Layer and C-doped Buffer |
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| DOI | |
| 其它 |
期刊:Journal of Electronic Materials 作者:Xiaoyi Liu; Kai Wang; Xiao Ma; Jun Tang; Hong Wang 出版日期:2025-11-30 |
| 求助人 | |
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(2025-6-4)