Lv12
78 积分 2026-06-10 加入
Next Generation Gate-all-around Device Design for Continued Scaling Beyond 2 nm Logic
3小时前
待确认
Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain
16小时前
已完结
Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures
16小时前
已完结
Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break
16小时前
已完结
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