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Spatial Oxygen-Vacancy Engineering for Enhanced Ferroelectricity in Flexible Hf0.5Zr0.5O2 Devices
5天前
已完结
Transition from the m Phase to o Phase in an HZO Thin Film Revealed by In Situ TEM
1个月前
已完结
Structure-Dependent Ferroelectric Enhancement in Hf0.5Zr0.5O2 Thin Films under High-Pressure Post-Deposition Annealing
1个月前
已完结
Excellent Ferroelectricity in 6 nm HZO with Sub-5 nm Nb Electrodes and Nb 2 O 5 Interface Engineering at Low Thermal Budget of 300 °C
3个月前
已完结
Temperature‐Graded Deposition of HfZrO x for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching
3个月前
已关闭
In Situ Study of the Ferroelectric–Antiferroelectric Phase Transition in Hf 1– x Zr x O 2 at Elevated Temperatures up to 600 °C
4个月前
已完结
Ultrathin Hf 0.5 Zr 0.5 O 2 Films with ZrO 2 Seed Layer for Ferroelectric Tunnel Junctions in Crossbar Array
5个月前
已完结
Field-Induced Enhancement of Ferroelectric Switching in Hf0.5Zr0.5O2 Capacitors under Cryogenic Conditions
6个月前
已完结
All-Oxide ITO/HZO/WO x Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing
6个月前
已完结
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