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Light-Emitting AlGaAs/GaAs Diodes Based on InGaAs Strain-Compensated Quantum Wells with Minimized Internal Losses Caused by 940-nm Radiation Absorption
2个月前
已完结
Performance improvement of InGaN LEDs by using strain compensated last quantum barrier and electron blocking layer
3个月前
已完结
Low threshold lasing of GaN-based vertical-cavity surface-emitting lasers with thin InGaN/GaN quantum well active region
3个月前
已完结
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