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18 积分 2025-10-07 加入
Improvement of 1.3- m GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE
1个月前
已完结
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
2个月前
已完结
Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers
2个月前
已完结
Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts
2个月前
已完结
Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance
4个月前
已完结
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
5个月前
已完结
Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier
5个月前
已完结
(Negative) Electron Affinity of AlN and AlGaN Alloys
5个月前
已完结
Numerical Investigations on the n+‐GaN/AlGaN/p+‐GaN Tunnel Junction for III‐Nitride UV Light‐Emitting Diodes
6个月前
已完结
Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts
6个月前
已完结
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