| 标题 |
Enhancing the lateral current injection by modulating the doping type in the p-type hole injection layer for InGaN/GaN vertical cavity surface emitting lasers |
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| DOI | |
| 其它 |
期刊:Optics Express 作者:Xuejiao Qiu; Yonghui Zhang; Sheng Hang; Yuanbin Gao; Jianquan Kou; et al 出版日期:2020-05-26 |
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(2025-6-4)