Lv1
70 积分 2023-12-05 加入
Electronic structure and optical properties of Ge- and F-doped α-Ga2O3: First-principles investigations*
1个月前
已完结
P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product
1个月前
已完结
Electrical and optical characterizations of β-Ga2O3:Sn films deposited on MgO (110) substrate by MOCVD
1个月前
已完结
Direct determination of band-gap renormalization in degenerately doped ultrawide band gap β-Ga2O3 semiconductor
1个月前
已完结
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
1个月前
已完结
Advances and prospects in Ga2O3/GaN heterojunctions: From fabrication to high-performance devices
1个月前
已完结
Review of self-powered solar-blind photodetectors based on Ga2O3
1个月前
已完结
High-performance self-powered solar-blind ultraviolet photodetector based on GaN/κ-Ga2O3 heterojunction
1个月前
已完结
GaN/Sn:Ga2O3 Nanowire Network n–n Heterojunction for High-Photocurrent Self-Powered Solar-Blind Photodetection
1个月前
已完结
Enhanced Carrier Transport and Photoresponse in Ga 2 O 3 Solar‐Blind Photodetectors via Se‐Induced Valence Band Modulation
5个月前
已完结
皖公网安备34019202002308
