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50 积分 2025-10-23 加入
Structure of Alsingle bondAl and Alsingle bondSi3N4 interfaces bonded at room temperature by means of the surface activation method
2个月前
已完结
Room temperature wafer direct bonding of smooth Si surfaces recovered by Ne beam surface treatments
2个月前
已完结
Wafer-to-wafer hybrid bonding at 400-nm interconnect pitch
2个月前
已完结
Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices
3个月前
已完结
Determination of Band Structure at GaAs/4H-SiC Heterojunctions
3个月前
已完结
Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer
3个月前
已完结
Effects of annealing on the electrical characteristics of GaAs/GaAs junctions by surface-activated bonding
3个月前
已完结
In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1)
3个月前
已完结
Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength
3个月前
已完结
Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
3个月前
已完结