Lv3
372 积分 2023-03-23 加入
Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation
14天前
已完结
Influence of the Interface Traps Distribution on I-V and C-V Characteristics of SiC MOSFET Evaluated by TCAD Simulations
14天前
已完结
Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness
14天前
已完结
High-Performance Gate-All-Around Phototransistor with Ga2O3/NiO Heterojunction for Advanced Ultraviolet Detection
14天前
已完结
Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs
15天前
已完结
High-k Dielectric Assisted Trench Termination of the 4H-SiC Super Junction Device for Improved Avalanche Capability
15天前
已完结
Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric
15天前
已完结
All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector
24天前
已完结
Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions
1个月前
已完结
All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector
1个月前
已完结
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