Lv31
280 积分 2026-03-24 加入
Epitaxial growth conditions and interface quality of InGaAs/GaAsP multiple quantum wells
20天前
已完结
High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications
1个月前
已完结
Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate
1个月前
已完结
Large‐Area Self‐Assembled Hexagonal Boron Nitride Nanosheet Films for Ultralow Dark Current Vacuum‐Ultraviolet Photodetectors
2个月前
已完结
Mechanism of photocarrier transport in vacuum ultraviolet photodetector based on hexagonal boron nitride nanosheets
2个月前
已完结
Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface
4个月前
已完结
Study on the influence of variable temperature growth on the properties of highly strained InGaAs/GaAs MQWs grown by MOCVD
5个月前
已完结
Microhole array metasurface-enhanced InAs/GaSb superlattice LWIR detectors with boosted photoresponse via guided-mode resonance coupling
7个月前
已完结
Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱ superlattices
7个月前
已完结
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