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70 积分 2026-04-19 加入
TCAD study of high breakdown voltage AlGaN/GaN HEMTs with embedded passivation layer
5天前
已完结
Enhancing thermal dissipation ability and electrical performance in GaN-on-GaN HEMTs through stepped-carbon buffer design
2个月前
已完结
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN
3个月前
已完结
Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors
3个月前
已完结
900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect
3个月前
已完结
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