Lv6
2040 积分 2020-09-05 加入
231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
16天前
已关闭
Efficiency increase in 220–230nm far-UVC LEDs and 200mW class 230nm power LED module grown on c-sapphire substrate
16天前
已关闭
Effect of n-type AlGaN buffer layers Growth Temperature on relaxation and conductivity in 228-230nm Far-UVC LED grown on c-Sapphire
16天前
已完结
Temperature dependence of the piezoelectric field in GaInN/GaN quantum wells and its impact on the device performance
25天前
已完结
Revealing the dependency of efficiency on the lateral carrier diffusion length in InGaN/GaN blue and green micro-LEDs
25天前
已关闭
Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures
25天前
已完结
Current Crowding Phenomenon: Theoretical and Direct Correlation With the Efficiency Droop of Light Emitting Diodes by a Modified ABC Model
29天前
已完结
Effect of current crowding on the ideality factor in MQW InGaN/GaN LEDs on sapphire substrates
29天前
已完结
Coupled modeling of current spreading, thermal effects and light extraction in III-nitride light-emitting diodes
29天前
已完结
衬底弯曲度(bow)值对LED芯片性能的影响
1个月前
已完结
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