Lv5
896 积分 2021-07-16 加入
Dislocation analysis in p-type 4H-SiC: Etching morphologies and electronic properties
1个月前
已完结
Study on the effects of rotational and heating methods on the melt flow and crystal growth rate in SiC growth systems by the TSSG method
1个月前
已完结
Wafer-Scale p-Type SiC Single Crystals with High Crystalline Quality
1个月前
已完结
Low-Temperature Growth of High-Quality SiC Single Crystals via TSSG from Si–Nd–C Melt: Multiphysics Simulation and Experimental Validation
1个月前
已完结
Numerical analysis on the thermal stress and dislocation density of a 300 mm SiC single crystal grown by the PVT method
1个月前
已完结
(Invited) Schematic Description of the Internal Stress Distribution Responsible for Defect Generation in Larger-Diameter PVT-Grown 4H-SiC Single Crystals
1个月前
已完结
The fracture stress of 8-inch silicon carbide during the PVT growth
1个月前
已完结
Origins and characterization techniques of stress in SiC crystals: A review
1个月前
已完结
Research progress of large size SiC single crystal materials and devices
3个月前
已完结
Unlocking different types of basal plane dislocations and its evolution in 4H-SiC
3个月前
已完结
皖公网安备34019202002308
