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10 积分 2026-06-04 加入
Reliability and parasitic issues in GaN-based power HEMTs: a review
3个月前
已完结
Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation
3个月前
已完结
Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs
3个月前
已完结
Towards proper characterization of nonlinear metal-semiconductor contacts. Generalization of the transmission line method
3个月前
已完结
Investigation of ultrathin surface passivation layers for GaN: A comparative analysis of Al2O3, SiO2, and SiNx in reducing surface recombination
3个月前
已完结
Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications
3个月前
已完结
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